High-speed semiconductor device with graded collector barrier

Details High-speed semiconductor device with graded collector barrier High-speed semiconductor device with graded collector barrier

1992-10-01

1995-02-14

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 23, 257191, 257198, H01L 29205, H01L 2972

Patent

active

053897986

ABSTRACT:
A high-speed semiconductor device includes an emitter layer serving as an injection source of hot electrons and a collector barrier layer disposed between a base layer and a collector layer. The potential profile of the collector barrier layer gradually varies from a region in the vicinity of the boundary between the base layer and the collector barrier layer whereby reflection of electrons at the collector barrier layer is significantly reduced. Therefore, current density in the ON state of the device is increased without damaging the high speed characteristics of the device, and current density in the OFF state of the device is decreased, resulting in a high-performance and high-speed semiconductor device.

REFERENCES:
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patent: 4847666 (1989-07-01), Heremans et al.
patent: 4868418 (1989-09-01), Imamura et al.
patent: 4987458 (1991-01-01), Gaylord
patent: 5010382 (1991-04-01), Katoh
patent: 5111265 (1992-05-01), Tanaka
Uenohara et al, "Analysis Of Electron Wave Reflectivity And Leakage Current Of Multi Quantum Barrier: MGB", Society of Electronic Information Communication, vol. J70-C, No. 6, 1987, pp. 851-857.
Yokoyama et al, "A New Functional, Resonant-Tunneling Hot Electron Transistor (RHET)", Japanese Journal of Applied Physics, vol. 24, No. 11, 1985, pp. L853-L854.

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