High speed optosemiconductor device having multiple quantum well

Details High speed optosemiconductor device having multiple quantum well High speed optosemiconductor device having multiple quantum well

1991-06-06

1992-11-03

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

359248, 359246, 359260, 257184, H01L 2714

Patent

active

051609932

ABSTRACT:
In an optosemiconductor device including a superlattice configuration (TBQ) of first and second quantum well layers and a potential barrier therebetween, photo-excited carriers are formed in the first quantum well layer and are tunnelled through the potential barrier toward the second quantum well layer, so that the tunneled carriers are accumulated in the second quantum well layer. An electric field is applied to the superlattice configuration to expel the tunneled carriers from the second quantum well layer.

REFERENCES:
patent: 4720309 (1988-01-01), Deveaud et al.
patent: 4745452 (1988-05-01), Sollner
patent: 4819036 (1989-04-01), Kuroda et al.
patent: 4903101 (1990-02-01), Maserjian
patent: 5036371 (1991-07-01), Schwartz
Migus et al., "One-Picosecond Optical NOR Gate at Room Temperature with a GaAs-AlGaAs Multiple-Quantum-Well Nonlinear Fabry-Perot Etalon", Appl. Phys. Lett., 46(1), Jan. 1, 1985, pp. 70-72.
Atsushi Tackeuchi et al.: "Fast Recovery of Excitonic Absorption Peaks in Tunneling Bi-Quantum-Well Structures", Japanese Journal of Applied Physics, vol. 28, No. 7, Jul. 1989, pp. L1098-L1100.

Affiliated with

Also associated with

Rating

High speed optosemiconductor device having multiple quantum well does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High speed optosemiconductor device having multiple quantum well, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High speed optosemiconductor device having multiple quantum well will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2053622