Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Patent
1995-01-31
1996-08-06
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Tunneling through region of reduced conductivity
257 35, 505190, 505234, 505239, H01L 2906, H01L 3922, H01B 1200, H01F 600
Patent
active
055436307
ABSTRACT:
The edge-defined, film-fed growth technique process is modified to produce a thin ribbon of bi-crystalline sapphire wherein the grain boundary is an essentially straight boundary and the angle is predetermined by selective cutting of the two seeds which are placed closely together during growth. The angle selection is optimized based on the superconducting material to be deposited and the application intended. After the ribbon is pulled, the ribbon is processed by cutting an appropriate section therefrom with the grain boundary. The substrate is polished and the high Tc superconducting material is deposited thereon to produce devices which rely on weak link Josephson junctions.
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Bates Herbert E.
Bliss David F.
Collier Stanton E.
Saadat Mahshid
The United States of America as represented by the Secretary of
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