Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Reexamination Certificate
2006-08-15
2006-08-15
Quach, T. N. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Tunneling through region of reduced conductivity
C257S033000, C257S034000
Reexamination Certificate
active
07091515
ABSTRACT:
At least two ramp-edge-structure Josephson junctions having different critical current densities to one another are provided on a substrate.
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Soutome, Y., et al., Investigation of Ramp-type Josephson Junctions with Surface-modifed Barriers, IEEE Transactions on Applied Superconductivity, vol. 11, No. 1, Mar. 2001, pp. 163-166.
Institute of Physics Publishing, Supercond. Sci. Technol. vol. 14, pp 1052-1055, 2001; “The improvement of the characteristics of ramp-edge junctions with interface modified barriers”.
Horibe Masahiro
Ishimaru Yoshihiro
Suzuki Hideo
Tanabe Keiichi
Wakana Hironori
Armstrong, Kratz, Quintos Hanson & Brooks, LLP.
International Superconductivity Technology Center, The Juridical
Quach T. N.
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