Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Patent
1996-12-06
1999-04-06
Crane, Sara
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Tunneling through region of reduced conductivity
257 33, 257 35, 505190, H01L 2906
Patent
active
058922431
ABSTRACT:
A high temperature superconductor junction and a method of forming the junction are disclosed. The junction 40 comprises a first high-T.sub.c, superconductive layer (first base electrode layer) 46 on a substrate 42 and a dielectric layer 48 on the first high-T.sub.c, superconductive layer. The dielectric layer and the first high-T.sub.c superconductive layer define a ramp edge 50. A trilayer SNS structure 52 is disposed on the ramp edge to form an SSNS junction. The SNS structure comprises a second high-T.sub.c, superconductive layer (second base electrode layer) 54 directly on the first high-T.sub.c superconductive layer, a normal barrier layer 56 on the second high-T.sub.c superconductive layer, and a third high-T.sub.c superconductive layer 58 (counterelectrode) on the barrier layer. The ramp edge is typically formed by photoresist masking and ionmilling. A plasma etch step can be performed in-situ to remove the photoresist layer 62 following formation of the ramp edge. A normal-superconductive (NS) structure can be optimally formed directly on the ramp edge following the plasma etch step to form an SNS junction 70. The SNS and NS structures are preferably formed in-situ.
REFERENCES:
patent: 4414738 (1983-11-01), Jelks et al.
patent: 4432134 (1984-02-01), Jones et al.
patent: 4454522 (1984-06-01), De Lozanne
patent: 5134117 (1992-07-01), DiIorio et al.
patent: 5256636 (1993-10-01), Wellstood et al.
patent: 5266558 (1993-11-01), Lichtenberg et al.
patent: 5280013 (1994-01-01), Newman et al.
patent: 5291035 (1994-03-01), Wellstood et al.
patent: 5322817 (1994-06-01), James et al.
patent: 5367178 (1994-11-01), DiIorio et al.
patent: 5378683 (1995-01-01), Cabanel et al.
patent: 5389606 (1995-02-01), Face
patent: 5399881 (1995-03-01), Bozovic et al.
patent: 5430014 (1995-07-01), Soltner et al.
patent: 5432149 (1995-07-01), Schuller et al.
patent: 5439877 (1995-08-01), Face
patent: 5472934 (1995-12-01), Akoh et al.
patent: 5488030 (1996-01-01), Tanaka et al.
patent: 5508255 (1996-04-01), Eddy
patent: 5523283 (1996-06-01), Simon et al.
patent: 5534491 (1996-07-01), Nakamura et al.
patent: 5627139 (1997-05-01), Chin et al.
patent: 5696392 (1997-12-01), Char et al.
Strikovskiy, M.D. et al., "Ramp-type YBa.sub.2 Cu.sub.3 O.sub.7-.delta. Josephson junctions with high characteristic voltage, fabricated by a new, completely in situ, growth technique," Appl. Phys. Lett. 69(19):2918-2920 (1996).
Crane Sara
TRW Inc.
Yatsko Michael S.
LandOfFree
High-temperature SSNS and SNS Josephson junction and method of m does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High-temperature SSNS and SNS Josephson junction and method of m, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High-temperature SSNS and SNS Josephson junction and method of m will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1373707