Transistor having a lightly doped region
Transistor having a metal silicide self-aligned to the gate
Transistor having a nonuniform doping channel
Transistor having a protruded drain
Transistor having a protruded drain
Transistor having a protruded drain
Transistor having an etchant-scalable channel length and method
Transistor having an improved sidewall gate structure and...
Transistor having an offset channel section
Transistor having compensation zones enabling a low...
Transistor having compensation zones enabling a low...
Transistor having dielectric stressor elements for applying...
Transistor having enhanced metal silicide and a self-aligned...
Transistor having fully-depleted junctions to reduce...
Transistor having high dielectric constant gate insulating...
Transistor having improved gate structure
Transistor having impurity concentration distribution...
Transistor having insulating spacers on gate sidewalls to...
Transistor having multiple channels
Transistor having narrow trench filled with...