Transistor having a nonuniform doping channel

Details Transistor having a nonuniform doping channel Transistor having a nonuniform doping channel

1994-09-21

1996-03-26

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257327, 257402, 257335, H01L 2976, H01L 31062

Patent

active

055023223

ABSTRACT:
A MOSFET having a nonuniform doping channel and a method for fabricating the same.
The MOS transistor having a nonuniform doping channel is comprised of: a gate oxide film formed on a semiconductor substrate provided with a trench; a gate electrode of some size formed on the gate oxide film atop the trench and its surroundings, the gate electrode having a portion longer than any other portion and thus, being asymmetrical with regard to the axis passing the center of the trench; a source region formed in a predetermined portion of the semiconductor substrate neighboring a short portion of the gate electrode; a high density channel region formed by doping impurities having the same type with the semiconductor substrate in a predetermined portion of the semiconductor substrate below a longer portion of the gate electrode; and a drain region formed in a predetermined portion of the semiconductor substrate neighboring the high density channel region.

REFERENCES:
patent: 4291321 (1981-09-01), Pfleiderer et al.
patent: 5338958 (1994-08-01), Mitsumoto
patent: 5359221 (1994-10-01), Miyamoto et al.

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