Transistor having a protruded drain
Transistor having a protruded drain
Transistor having an etchant-scalable channel length and method
Transistor having an improved sidewall gate structure and...
Transistor having an offset channel section
Transistor having compensation zones enabling a low...
Transistor having compensation zones enabling a low...
Transistor having dielectric stressor elements for applying...
Transistor having enhanced metal silicide and a self-aligned...
Transistor having fully-depleted junctions to reduce...
Transistor having high dielectric constant gate insulating...
Transistor having impurity concentration distribution...
Transistor having insulating spacers on gate sidewalls to...
Transistor having narrow trench filled with...
Transistor having raised source and drain
Transistor having reverse self-aligned structure
Transistor having source-to-drain nonuniformly-doped channel and
Transistor having three electrically isolated electrodes and...
Transistor in semiconductor devices
Transistor including a deposited channel region having a...