Transistor having source-to-drain nonuniformly-doped channel and

Details Transistor having source-to-drain nonuniformly-doped channel and Transistor having source-to-drain nonuniformly-doped channel and

1992-10-29

1995-11-14

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257346, 257408, H01L 2910, H01L 2978

Patent

active

054669570

ABSTRACT:
A semiconductor device including a substrate of a first conductivity type, a gate electrode laminated thereon and a source and drain region of a second conductivity type formed in self-alignment manner in an upper portion of the substrate outside the gate electrode, the conductor device further including a high concentration layer of the first conductivity type in a channel region between the source and the drain and a low concentration layer of the first conductivity type between the high concentration layer and the source and drain region.

REFERENCES:
patent: 4649629 (1987-03-01), Miller et al.
patent: 4957824 (1990-07-01), Shinada
A Novel Source-to-Drain Nonuniformly Doped Chanel (NUDC) MOSFET for High Current Drivability and Threshold Voltage Controllability; pp. 391-394, IEDM, 1990.

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