Transistor gate electrode having conductor material layer
Transistor gate structure
Transistor having a barrier layer below a high permittivity gate
Transistor having a deposited dual-layer spacer structure
Transistor having a gate dielectric which is substantially...
Transistor having a lightly doped region
Transistor having a metal silicide self-aligned to the gate
Transistor having a nonuniform doping channel
Transistor having a protruded drain
Transistor having a protruded drain
Transistor having a protruded drain
Transistor having an etchant-scalable channel length and method
Transistor having an improved sidewall gate structure and...
Transistor having an offset channel section
Transistor having compensation zones enabling a low...
Transistor having compensation zones enabling a low...
Transistor having dielectric stressor elements for applying...
Transistor having enhanced metal silicide and a self-aligned...
Transistor having fully-depleted junctions to reduce...
Transistor having high dielectric constant gate insulating...