Transistor gate electrode having conductor material layer

Details Transistor gate electrode having conductor material layer Transistor gate electrode having conductor material layer

2011-06-28

2011-06-28

Booth, Richard A. (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29125, C257S412000

Reexamination Certificate

active

07968957

ABSTRACT:
Various embodiments of the invention relate to a PMOS device having a transistor channel of silicon germanium material on a substrate, a gate dielectric having a dielectric constant greater than that of silicon dioxide on the channel, a gate electrode conductor material having a work function in a range between a valence energy band edge and a conductor energy band edge for silicon on the gate dielectric, and a gate electrode semiconductor material on the gate electrode conductor material.

REFERENCES:
patent: 6111267 (2000-08-01), Fischer et al.
patent: 6225168 (2001-05-01), Gardner et al.
patent: 6326667 (2001-12-01), Sugiyama et al.
patent: 6407406 (2002-06-01), Tezuka
patent: 6632710 (2003-10-01), Takahashi
patent: 6911384 (2005-06-01), Dokumaci et al.
patent: 7223679 (2007-05-01), Murthy et al.
patent: 7642610 (2010-01-01), Murthy et al.
patent: 2002/0105015 (2002-08-01), Kubo et al.
patent: 2003/0227013 (2003-12-01), Currie et al.
patent: 2004/0023478 (2004-02-01), Samavedam et al.
patent: 2005/0087870 (2005-04-01), Adetutu et al.
A. Ritenour, et al., “Epitaxial Strained germanium p-MOSFET with HfO2 Gate Dielectrics and TaN Gate Electrode”, International Electron Devices Meeting 2003, IEDM. Technical Digest, pp. 433-436.
D. Wu, et al., “A Novel Strained SiO.7GeO.3 Surface-Channel pMOSFET with an ALSTiN.AI203/HfAIOx/AI203 Gate Stack”, IEEE Electron Device Letters, IEEE Inc., vol. 24, No. 3, Mar. 2003, pp. 171-173.
Intel Corp., Office Action mailed May 7, 2008 in European Patent Application No. 04 815 678.0.
Intel Corp., First Office Action mailed Jun. 13, 2008 in PRC Patent Application No. 200480042095.5.
Intel Corp.,Non Final Office Actionmailed Aug. 22, 2006; U.S. Appl. No. 10/745,978.
Intel Corp.,Final Office Actionmailed Mar. 22, 2006; U.S. Appl. No. 10/745,978.
Intel Corp.,Non Final Office Actionmailed Aug. 10, 2005; U.S. Appl. No. 10/745,978.
Intel Corp.,Non Final Office Actionmailed Apr. 10, 2009; U.S. Appl. No. 11/715,703.
Intel Corp.,Non Final Office Actionmailed Aug. 2, 2010; U.S. Appl. No. 12/553,033.

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