Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-11-09
2000-04-18
Hardy, David
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257310, 257639, 257649, H01L 2978
Patent
active
060518650
ABSTRACT:
A transistor and a method for making a transistor are described. Barrier species such as nitrogen may be introduced into a semiconductor substrate to form a barrier layer. A dielectric having a high dielectric constant, preferably a metal- and oxygen-bearing dielectric, may then be deposited upon the semiconductor substrate. The barrier layer preferably mitigates short channel effects and prevents dopant and/or metal atom migration into or out of the gate structure. The dielectric may be annealed in an oxygen-bearing atmosphere to passivate the dielectric material and to incorporate barrier species into the dielectric. Alternatively, the anneal may be performed in an inert atmosphere. Following deposition of a conductive gate material upon the dielectric, a gate conductor and gate dielectric may be patterned. Lightly doped drain impurity areas and/or source and drain impurity areas may then be formed in the semiconductor substrate.
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Gardner Mark I.
Gilmer Mark C.
Wristers Derick J.
Advanced Micro Devices , Inc.
Daffer Kevin L.
Hardy David
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