Transistor having a barrier layer below a high permittivity gate

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

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257310, 257639, 257649, H01L 2978

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active

060518650

ABSTRACT:
A transistor and a method for making a transistor are described. Barrier species such as nitrogen may be introduced into a semiconductor substrate to form a barrier layer. A dielectric having a high dielectric constant, preferably a metal- and oxygen-bearing dielectric, may then be deposited upon the semiconductor substrate. The barrier layer preferably mitigates short channel effects and prevents dopant and/or metal atom migration into or out of the gate structure. The dielectric may be annealed in an oxygen-bearing atmosphere to passivate the dielectric material and to incorporate barrier species into the dielectric. Alternatively, the anneal may be performed in an inert atmosphere. Following deposition of a conductive gate material upon the dielectric, a gate conductor and gate dielectric may be patterned. Lightly doped drain impurity areas and/or source and drain impurity areas may then be formed in the semiconductor substrate.

REFERENCES:
patent: 4266985 (1981-05-01), Ito et al.
patent: 4642878 (1987-02-01), Maeda
patent: 4738934 (1988-04-01), Johnston, Jr. et al.
patent: 5064775 (1991-11-01), Chang
patent: 5284795 (1994-02-01), Gay et al.
patent: 5362667 (1994-11-01), Linn et al.
patent: 5420056 (1995-05-01), Moslehi
patent: 5528068 (1996-06-01), Ohmi
patent: 5554871 (1996-09-01), Yamashita et al.
patent: 5557129 (1996-09-01), Oda et al.
patent: 5580800 (1996-12-01), Zhang et al.
patent: 5596218 (1997-01-01), Soleimani et al.
patent: 5808348 (1998-09-01), Ito et al.
patent: 5821172 (1998-10-01), Gilmer et al.
patent: 5858843 (1999-01-01), Doyle et al.
patent: 5861335 (1999-01-01), Hause et al.
patent: 5882993 (1999-03-01), Gardner et al.
patent: 5891798 (1999-04-01), Doyle et al.

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