LandOfFree - US Patents - Listing for Single-crystal, oriented-crystal, and epitaxy growth processes;

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Method for fabricating bulk AlGaN single crystals

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

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Method for fabricating bulk GaN single crystals

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

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Method for fabricating filament type high-temperature...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

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Method for fabricating GaN single crystal substrate

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

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Method for fabricating grating coupler

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

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Method for fabricating Group III nitride semiconductor...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

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Method for fabricating hafnia films

Single-crystal – oriented-crystal – and epitaxy growth processes; – Organic compound containing single-crystal {c30b 29/54}

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Method for fabricating optical fiber preform using extrusion...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth with a subsequent step acting on the...

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Method for fabricating orientation-patterned gallium...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

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Method for fabricating semiconductor device

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Using an energy beam or field – a particle beam or field – or...

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Method for fabricating semiconductor device

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

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Method for fabricating semiconductor light integrated circuit

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

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Method for fabricating silicon thin film

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

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Method for fabricating thin-film transistor

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from solid or gel state – Using heat

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Method for fabricating ultra thin single-crystal metal oxide...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth with a subsequent step acting on the...

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Method for fabricating waveguides

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

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Method for fabricating waveguides

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

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Method for feeding a granular raw material and feeding apparatus

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth

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Method for feeding granular silicon material, feed pipe used in

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth

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Method for fixing metal particles and method for...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

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