Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent
1997-02-03
1999-05-11
Hiteshew, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
117 33, C30B15/02
Patent
active
059023953
ABSTRACT:
In a pulling apparatus operated according to the multi-pulling method or CCZ method, granular silicon material is first fed to a feed pipe from a feeder so as to form stagnation of the granular silicon material in the feed pipe. The feeding of the granular silicon material from the feeder to the feed pipe is repeatedly commenced and stopped so as to maintain the stagnation of the granular silicon material. The feed rate of the granular silicon material from the feeder to the feed pipe is increased with time until the feed of the silicon material is completed. This prevents abrasion of a coating or lining provided on the inner surface of the feeder and also prevents damage of the feeder. In a pulling apparatus operated according to the Czochralski method, after causing granular silicon material to stagnate in the feed pipe, the crucible is lowered or the feed pipe is raised, while the stagnation of the granular silicon material is maintained, so as to form an unmolten layer of the granular silicon material on the molten or solidified surface of the silicon melt. The unmolten layer is then melted, and the granular silicon material is fed onto the unmolten layer through the feed pipe while the stagnation of the granular silicon material in the feed pipe is maintained. Accordingly, silicon material can be recharged without damaging the crucible, so that productivity and manufacturing yield of silicon monocrystals can be improved.
REFERENCES:
patent: 4968380 (1990-11-01), Freedman et al.
patent: 5242667 (1993-09-01), Koziol et al.
patent: 5419462 (1995-05-01), Johnston et al.
patent: 5587016 (1996-12-01), Altekruger et al.
patent: 5690733 (1997-11-01), Nagai et al.
patent: 5733368 (1998-03-01), Nagai et al.
Fumio Shimura, "Semiconductor Silicon Crystal Technology", pp. 178-181, 1989.
Harada Isamu
Nagai Naoki
Oda Michiaki
Tashiro Chihiro
Hiteshew Felisa
Shin-Etsu Handotai & Co., Ltd.
LandOfFree
Method for feeding granular silicon material, feed pipe used in does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for feeding granular silicon material, feed pipe used in , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for feeding granular silicon material, feed pipe used in will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-243558