Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2004-07-20
2010-02-09
Hiteshew, Felisa C (Department: 1792)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S084000, C117S089000, C117S097000
Reexamination Certificate
active
07658798
ABSTRACT:
A metal fine particle is adhere to a predetermined location on a substrate. A resist film containing a metallic compound dispersed therein is formed on a substrate (101). A patterning of the resist film is conducted by a lithography. The substrate (101) having the patterned resist formed thereon is heated within an oxygen atmosphere to adhere a metal fine particle (106) to the surface of the substrate (101), while removing the resin in the patterned resist.
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Fujita Jun-ichi
Hongo Hiroo
Ishida Masahiko
Hiteshew Felisa C
NEC Corporation
Sughrue & Mion, PLLC
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