Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2005-04-19
2005-04-19
Hiteshew, Felisa (Department: 1765)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S095000, C117S097000, C438S018000, C438S468000, C438S795000
Reexamination Certificate
active
06881261
ABSTRACT:
A p-type InGaAlN layer, an InGaAlN active layer, and an n-type InGaAlN layer each having a composition represented by (AlxGa1-x)yIn1-yN (0≦x≦1, 0≦y≦1) are formed on a sapphire substrate. In the as-grown state, Mg is bonded to hydrogen atoms in the p-type InGaAlN layer. Then, the back surface of the sapphire substrate is irradiated with a laser beam in a nitrogen atmosphere. The resistance of the p-type InGaAlN layer is reduced by removing hydrogen therefrom with irradiation with a weak laser beam. During the irradiation with the laser beam, the diffusion of a dopant in a multilayer portion is suppressed such that a dopant profile retains sharpness. It is also possible to separate the sapphire substrate from the multilayer portion by subsequently using an intense laser beam for irradiation.
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Hiteshew Felisa
McDermott Will & Emery LLP
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