Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2007-03-28
2011-10-25
Kunemund, Bob M (Department: 1714)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S095000, C117S096000, C117S101000, C117S104000
Reexamination Certificate
active
08043429
ABSTRACT:
The present invention relates to a method for fabricating a filament type high-temperature superconducting wire in which a thin film type high-temperature superconducting wire is fabricated into a filament shape suitable for use with alternating current. The method includes depositing a conducting ceramic or metal epitaxially on a metal substrate10having bi-axially textured property to deposit a conductive thin film layer20(S10); depositing silver, copper, nickel, silver and copper, or a nickel alloy epitaxially on the deposited conductive thin film layer20to deposit a metal layer30(S20); cutting the deposited metal layer30into a filament shape having a predetermined width using a laser, a slitter, or etching and separating the cut metal layer from the conductive film layer20by selective etching, stress generation, or a difference in thermal expansion coefficients to form a metal filament40(S30); coating a single layer or multi-layers of a ceramic buffer layer41on the outside of the separated metal filament40(S40); coating a superconducting layer42on the outside of the ceramic buffer layer41(S50); and coating a single layer or multi-layers of a metal protective layer43on the outside of the superconducting layer42(S60).
REFERENCES:
patent: 2004/0250651 (2004-12-01), Goyal et al.
patent: 2007/0238619 (2007-10-01), Xiong
Stability of Superconductors; Lawrence Dresner; Kluwer Academic Publishers; (1995).
Choi Kyeong Dal
Hong Gye Won
Lee Hee Gyoun
Hershkovitz Abraham
Hershkovitz & Associates LLC
Korea Polytechnic University
Kunemund Bob M
LandOfFree
Method for fabricating filament type high-temperature... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for fabricating filament type high-temperature..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating filament type high-temperature... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4297189