Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent
1997-03-17
1999-03-02
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
117214, 117216, C30B 1502
Patent
active
058764968
ABSTRACT:
A feeding reservoir 11 for intermittently or continuously feeding granular raw material into a pulling apparatus 1, a chamber 13 connected to the feeding reservoir 11 through a gate valve 12, a granular raw material supply section 15 by which the granular raw material is supplied to the chamber 13 through a gate valve 14 and a pressure adjustment means 20 which adjusts the inner pressure of the chamber 13 is provided, and the granular raw material is fed to the feeding reservoir 11 while maintaining the inner pressure of the feeding reservoir 11 as the same as the inner pressure of the single crystal pulling apparatus 1. This feeding method and structure makes it possible to feed an additional amount of granular raw material even during the continuous charging process and or the recharging process without interrupting the process and also to pull a heavy single crystal rod with a large diameter without increasing the capacity of the feeding reservoir.
REFERENCES:
patent: Re35242 (1996-05-01), Kajimoto et al.
patent: 3998686 (1976-12-01), Meiling et al.
patent: 5229082 (1993-07-01), Seidensticker
patent: 5324488 (1994-06-01), Klingshirn et al.
Nagai Naoki
Oda Michiaki
Ozaki Atsushi
Tashiro Chihiro
Kunemund Robert
Shin-Etsu Handotai & Co., Ltd.
Snider Ronald R.
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