LandOfFree - US Patents - Listing for Single-crystal, oriented-crystal, and epitaxy growth processes;

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Shallow melt apparatus for semicontinuous czochralski...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth

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Shaped nanocrystal particles and methods for making the same

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having growth from a solution comprising a solvent which is...

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Shaped nanocrystal particles and methods for making the same

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing

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Shaped nanocrystal particles and methods for working the same

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having growth from a solution comprising a solvent which is...

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Sheet manufacturing method, sheet, sheet manufacturing...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth

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Si-doped GaAs single crystal substrate

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Havin growth from molten state

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SiC device and method for manufacturing the same

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

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SiC material, semiconductor processing equipment and method...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

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Sic single crystal and method for growing the same

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

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SiC single crystal and method for growth thereof

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

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SiGeC semiconductor crystal and production method thereof

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth with a subsequent step of heat treating...

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Silica crucible with inner layer crystallizer and method

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus

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Silica glass crucible

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus

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Silica glass crucible with barium-doped inner wall

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus

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Silica glass crucible with barium-doped inner wall

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus

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Silicon carbide and method for producing the same

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With pretreatment or preparation of a base

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Silicon carbide film and method for manufacturing the same

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

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Silicon carbide single crystal and method and apparatus for...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Fully-sealed or vacuum-maintained chamber

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Silicon carbide single crystal and method and apparatus for...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

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Silicon carbide single crystal and method and apparatus for...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

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