LandOfFree - US Patents - Listing for Single-crystal, oriented-crystal, and epitaxy growth processes;

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Methods for manufacturing substrates to form monocrystalline dia

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

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Methods for pulling a single crystal

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth

Reexamination Certificate

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Methods for reducing the curvature in boron-doped silicon...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth with a subsequent step acting on the...

Reexamination Certificate

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Methods for repair of single crystal superalloys by laser...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes joining independent crystals

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Methods for surface-biaxially-texturing amorphous films

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth with a subsequent step of heat treating...

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Methods for transferring a layer onto a substrate

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

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Methods for treating semiconductor substrates

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

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Methods of crystal optimization

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from solid or gel state

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Methods of fabricating silicon carbide crystals

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Reexamination Certificate

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Methods of fabricating silicon carbide crystals

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

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Methods of forming carbon-containing silicon epitaxial layers

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing

Reexamination Certificate

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Methods of forming diamond semiconductor devices and layers on n

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing

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Methods of forming nanocrystals

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

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Methods of forming semiconductor wafers, methods of treating...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

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Methods of forming silicon nanocrystals by laser annealing

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

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Methods of forming tungsten nucleation layer

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

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Methods of generating and screening for high free energy...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having growth from a solution comprising a solvent which is...

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Methods of growing a group III nitride crystal

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Havin growth from molten state

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Methods of growing a group III nitride crystal

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Havin growth from molten state

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Methods of growing nickel-manganese oxide single crystals

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth with a subsequent step acting on the...

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