Methods of forming tungsten nucleation layer

Details Methods of forming tungsten nucleation layer Methods of forming tungsten nucleation layer

2005-06-14

2005-06-14

Hiteshew, Felisa (Department: 1765)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

C117S092000, C427S250000, C427S253000, C427S255280, C427S255390

Reexamination Certificate

active

06905543

ABSTRACT:
The nucleation delay in the formation of a tungsten layer on a substrate is reduced or eliminated by alternative processes. In one process the substrate is exposed to atomic hydrogen before the tungsten nucleation layer is formed. In the other process the substrate is exposed to a boron hydride such as diborane (B2H6) before the nucleation layer is formed. The process works effectively to reduce or eliminate the tungsten nucleation delay on a variety of surfaces, including silicon, silicon dioxide, silicon nitride and titanium nitride.

REFERENCES:
patent: 6110278 (2000-08-01), Saxena
patent: 6156382 (2000-12-01), Rajagopalan et al.
patent: 6524956 (2003-02-01), Tian et al.

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