Methods of forming nanocrystals

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Reexamination Certificate

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C117S094000, C117S095000, C117S096000

Reexamination Certificate

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07618492

ABSTRACT:
Methods of selectively forming nanocrystals on semiconductor devices are disclosed. Regions of a workpiece are masked with a masking material, and the nanocrystals are formed on the unmasked regions. The nanocrystals may be formed by exposing the masked workpiece to a first substance, and exposing the workpiece to at least one second substance either before or after the masking material is removed.

REFERENCES:
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