Methods of forming diamond semiconductor devices and layers on n

Details Methods of forming diamond semiconductor devices and layers on n Methods of forming diamond semiconductor devices and layers on n

1995-02-22

1996-10-08

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With a step of measuring, testing, or sensing

117 95, 117103, 117929, C30B 2904

Patent

active

055627692

ABSTRACT:
A microelectronic structure including a plurality of spaced apart diamond structures on which a plurality of semiconductor devices may be formed. The semiconductor devices include a semiconducting diamond layer on each of the diamond structures. The diamond structures are preferably oriented relative to a single crystal nondiamond substrate so that the diamond structures have a (100)-oriented outer face for forming the semiconductor devices thereon. The microelectronic structure may be diced into discrete devices, or the devices interconnected, such as to form a higher powered device. One embodiment of the microelectronic structure includes the plurality of diamond structures, wherein each diamond structure is formed of a highly oriented textured diamond layer approaching single crystal quality, yet capable of fabrication on a single crystal nondiamond substrate. A method for fabricating the nondiamond highly oriented textured diamond layer includes carburizing a face of the nondiamond substrate, nucleating the carburized face by electrical bias enhanced nucleation, and selectively growing diamond favoring growth of the (100)-oriented grains.

REFERENCES:
patent: 3961103 (1976-06-01), Aisenberg
patent: 5030583 (1991-07-01), Beetz
patent: 5236545 (1993-08-01), Pryor
Welter et al, "Textured Growth of Diamond on Silicon Via in Situ Carbarization and Bios-enhanced Nucleation", Appl. Phys. Lett. vol. 62, No. 11 15 Mar. 1993 pp. 1215-1217.

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