Methods of forming silicon nanocrystals by laser annealing

Details Methods of forming silicon nanocrystals by laser annealing Methods of forming silicon nanocrystals by laser annealing

2007-01-25

2010-12-28

Kunemund, Robert M (Department: 1714)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

C117S088000, C117S098000, C117S099000, C117S100000, C117S101000, C117S102000, C117S103000, C117S104000, C117S105000, C977S784000, C977S809000, C977S814000, C977S844000, C977S890000, C977S891000

Reexamination Certificate

active

07857907

ABSTRACT:
The present invention relates to a method for forming a layered structure with silicon nanocrystals. In one embodiment, the method comprises the steps of: (i) forming a first conductive layer on a substrate, (ii) forming a silicon-rich dielectric layer on the first conductive layer, and (iii) laser-annealing at least the silicon-rich dielectric layer to induce silicon-rich aggregation to form a plurality of silicon nanocrystals in the silicon-rich dielectric layer. The silicon-rich dielectric layer is one of a silicon-rich oxide film having a refractive index in the range of about 1.4 to 2.3, or a silicon-rich nitride film having a refractive index in the range of about 1.7 to 2.3. The layered structure with silicon nanocrystals in a silicon-rich dielectric layer is usable in a solar cell, a photodetector, a touch panel, a non-volatile memory device as storage node, and a liquid crystal display.

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