Methods of forming carbon-containing silicon epitaxial layers

Details Methods of forming carbon-containing silicon epitaxial layers Methods of forming carbon-containing silicon epitaxial layers

2007-07-31

2011-10-04

Kunemund, Bob M (Department: 1792)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With a step of measuring, testing, or sensing

C117S088000, C117S089000, C117S090000, C117S093000, C117S095000, C117S097000

Reexamination Certificate

active

08029620

ABSTRACT:
In a first aspect, a method is provided for forming an epitaxial layer stack on a substrate. The method includes (1) selecting a target carbon concentration for the epitaxial layer stack; (2) forming a carbon-containing silicon layer on the substrate, the carbon-containing silicon layer having at least one of an initial carbon concentration, a thickness and a deposition time selected based on the selected target carbon concentration; and (3) forming a non-carbon-containing silicon layer on the carbon-containing silicon layer prior to etching. Numerous other aspects are provided.

REFERENCES:
patent: 3675619 (1972-07-01), Burd
patent: 4429324 (1984-01-01), Wilkens
patent: 4834831 (1989-05-01), Nishizawa et al.
patent: 4865659 (1989-09-01), Shigeta et al.
patent: 5112439 (1992-05-01), Reisman et al.
patent: 5236545 (1993-08-01), Pryor
patent: 5273930 (1993-12-01), Steele et al.
patent: 5288658 (1994-02-01), Ishihara
patent: 5294286 (1994-03-01), Nishizawa et al.
patent: 5360760 (1994-11-01), Hayashi
patent: 5363800 (1994-11-01), Larkin et al.
patent: 5372860 (1994-12-01), Fehlner et al.
patent: 5374570 (1994-12-01), Nasu et al.
patent: 5378651 (1995-01-01), Agnello et al.
patent: 5469806 (1995-11-01), Mochizuki et al.
patent: 5480818 (1996-01-01), Matsumoto et al.
patent: 5503875 (1996-04-01), Imai et al.
patent: 5521126 (1996-05-01), Okamura et al.
patent: 5527733 (1996-06-01), Nishizawa et al.
patent: 5674304 (1997-10-01), Fukada et al.
patent: 5693139 (1997-12-01), Nishizawa et al.
patent: 5796116 (1998-08-01), Nakata et al.
patent: 5807792 (1998-09-01), Ilg et al.
patent: 5849092 (1998-12-01), Xi et al.
patent: 5906680 (1999-05-01), Meyerson
patent: 5916365 (1999-06-01), Sherman
patent: 6019839 (2000-02-01), Achutharaman et al.
patent: 6022587 (2000-02-01), Acutharaman et al.
patent: 6025627 (2000-02-01), Forbes et al.
patent: 6042654 (2000-03-01), Comita et al.
patent: 6055927 (2000-05-01), Shang et al.
patent: 6064081 (2000-05-01), Robinson et al.
patent: 6110291 (2000-08-01), Haruta et al.
patent: 6124158 (2000-09-01), Dautartas et al.
patent: 6144060 (2000-11-01), Park et al.
patent: 6159852 (2000-12-01), Nuttall et al.
patent: 6177717 (2001-01-01), Chantre et al.
patent: 6200893 (2001-03-01), Sneh
patent: 6207487 (2001-03-01), Kim et al.
patent: 6228728 (2001-05-01), Furukawa et al.
patent: 6232196 (2001-05-01), Raaijmakers et al.
patent: 6270572 (2001-08-01), Kim et al.
patent: 6284646 (2001-09-01), Leem
patent: 6284686 (2001-09-01), Marlor
patent: 6287965 (2001-09-01), Kang et al.
patent: 6291319 (2001-09-01), Yu et al.
patent: 6305314 (2001-10-01), Sneh et al.
patent: 6335280 (2002-01-01), van der Jeugd
patent: 6342277 (2002-01-01), Sherman
patent: 6348420 (2002-02-01), Raaijmakers et al.
patent: 6352945 (2002-03-01), Matsuki et al.
patent: 6358829 (2002-03-01), Yoon et al.
patent: 6383955 (2002-05-01), Matsuki et al.
patent: 6391785 (2002-05-01), Satta et al.
patent: 6391803 (2002-05-01), Kim et al.
patent: 6399491 (2002-06-01), Jeon et al.
patent: 6410463 (2002-06-01), Matsuki
patent: 6451119 (2002-09-01), Sneh et al.
patent: 6458718 (2002-10-01), Todd
patent: 6462367 (2002-10-01), Marsh et al.
patent: 6468924 (2002-10-01), Lee et al.
patent: 6489241 (2002-12-01), Thilderkvist et al.
patent: 6492283 (2002-12-01), Raaijmakers et al.
patent: 6511539 (2003-01-01), Raaijmakers
patent: 6534395 (2003-03-01), Werkhoven et al.
patent: 6544900 (2003-04-01), Raaijmakers et al.
patent: 6559520 (2003-05-01), Matsuki et al.
patent: 6562720 (2003-05-01), Thilderkvist et al.
patent: 6576535 (2003-06-01), Drobny et al.
patent: 6590344 (2003-07-01), Tao et al.
patent: 6620670 (2003-09-01), Song et al.
patent: 6630413 (2003-10-01), Todd
patent: 6632279 (2003-10-01), Ritala et al.
patent: 6653212 (2003-11-01), Yamanaka et al.
patent: 6656812 (2003-12-01), Marty et al.
patent: 6750119 (2004-06-01), Chu et al.
patent: 6776841 (2004-08-01), Pyi
patent: 6797558 (2004-09-01), Nuttall et al.
patent: 6821825 (2004-11-01), Todd
patent: 6908866 (2005-06-01), Chu et al.
patent: 6998305 (2006-02-01), Arena et al.
patent: 7045840 (2006-05-01), Tamai
patent: 7121286 (2006-10-01), Nakao
patent: 7183576 (2007-02-01), Chu et al.
patent: 7230274 (2007-06-01), O'Loughlin et al.
patent: 7235492 (2007-06-01), Samoilov
patent: 7312128 (2007-12-01), Kim et al.
patent: 7353841 (2008-04-01), Kono et al.
patent: 7354821 (2008-04-01), Chung et al.
patent: 7361563 (2008-04-01), Shin et al.
patent: 7405422 (2008-07-01), Chu et al.
patent: 7438760 (2008-10-01), Bauer et al.
patent: 2001/0000866 (2001-05-01), Sneh et al.
patent: 2001/0020712 (2001-09-01), Raaijmakers et al.
patent: 2001/0024387 (2001-09-01), Raaijmakers et al.
patent: 2001/0024871 (2001-09-01), Yagi
patent: 2001/0028924 (2001-10-01), Sherman
patent: 2001/0034123 (2001-10-01), Jeon et al.
patent: 2001/0041250 (2001-11-01), Werkhoven et al.
patent: 2001/0046567 (2001-11-01), Matsuki et al.
patent: 2001/0055672 (2001-12-01), Todd
patent: 2002/0000598 (2002-01-01), Kang et al.
patent: 2002/0016084 (2002-02-01), Todd
patent: 2002/0022347 (2002-02-01), Park et al.
patent: 2002/0031618 (2002-03-01), Sherman
patent: 2002/0047151 (2002-04-01), Kim et al.
patent: 2002/0060363 (2002-05-01), Xi et al.
patent: 2002/0074588 (2002-06-01), Lee
patent: 2002/0076837 (2002-06-01), Hujanen et al.
patent: 2002/0090818 (2002-07-01), Thilderkvist et al.
patent: 2002/0093042 (2002-07-01), Oh et al.
patent: 2002/0098627 (2002-07-01), Pomarede et al.
patent: 2002/0117399 (2002-08-01), Chen et al.
patent: 2002/0145168 (2002-10-01), Bojarczuk, Jr. et al.
patent: 2002/0155722 (2002-10-01), Satta et al.
patent: 2002/0168868 (2002-11-01), Todd
patent: 2002/0172768 (2002-11-01), Endo et al.
patent: 2002/0173113 (2002-11-01), Todd
patent: 2002/0173130 (2002-11-01), Pomerede et al.
patent: 2002/0182423 (2002-12-01), Chu et al.
patent: 2002/0197831 (2002-12-01), Todd et al.
patent: 2002/0197881 (2002-12-01), Ramdani et al.
patent: 2003/0013320 (2003-01-01), Kim et al.
patent: 2003/0015764 (2003-01-01), Raaijmakers et al.
patent: 2003/0022528 (2003-01-01), Todd
patent: 2003/0032281 (2003-02-01), Werkhoven et al.
patent: 2003/0036268 (2003-02-01), Brabant et al.
patent: 2003/0049942 (2003-03-01), Haukka et al.
patent: 2003/0060057 (2003-03-01), Raaijmakers et al.
patent: 2003/0066486 (2003-04-01), Zheng et al.
patent: 2003/0072884 (2003-04-01), Zhang et al.
patent: 2003/0072975 (2003-04-01), Shero et al.
patent: 2003/0079677 (2003-05-01), Pyi
patent: 2003/0082300 (2003-05-01), Todd et al.
patent: 2003/0089308 (2003-05-01), Raaijmakers
patent: 2003/0089942 (2003-05-01), Bhattacharyya
patent: 2003/0101927 (2003-06-01), Raaijmakers
patent: 2003/0106490 (2003-06-01), Jallepally et al.
patent: 2003/0108674 (2003-06-01), Chung et al.
patent: 2003/0116804 (2003-06-01), Visokay et al.
patent: 2003/0124262 (2003-07-01), Chen et al.
patent: 2003/0129826 (2003-07-01), Werkhoven et al.
patent: 2003/0143841 (2003-07-01), Yang et al.
patent: 2003/0160277 (2003-08-01), Bhattacharyya
patent: 2003/0162370 (2003-08-01), Sukegawa et al.
patent: 2003/0166318 (2003-09-01), Zheng et al.
patent: 2003/0172872 (2003-09-01), Thakur et al.
patent: 2003/0173586 (2003-09-01), Moriwaki et al.
patent: 2003/0185980 (2003-10-01), Endo
patent: 2003/0186561 (2003-10-01), Law et al.
patent: 2003/0188682 (2003-10-01), Tois et al.
patent: 2003/0189208 (2003-10-01), Law et al.
patent: 2003/0189232 (2003-10-01), Law et al.
patent: 2003/0190423 (2003-10-01), Yang et al.
patent: 2003/0190497 (2003-10-01), Yang et al.
patent: 2003/0194853 (2003-10-01), Jeon
patent: 2003/0198754 (2003-10-01), Xi et al.
patent: 2003/0207555 (2003-11-01), Takayanagi et al.
patent: 2003/0213560 (2003-11-01), Wang et al.
patent: 2003/0213977 (2003-11-01), Toyoda et al.
patent: 2003/0215570 (2003-11-01), Seutter et al.
patent: 2003/0216981 (2003-11-01), Tillman
patent: 2003/0224566 (2003-12-01), Clampitt et al.
patent: 2003/0232554 (2003-12-01), Blum et al.
patent: 2003/0235961 (2003-12-01), Metzner et al.
patent: 2004/0007747 (2004-01-01), Visokay et al.
patent: 2004/0009307 (2004-01-01), Koh et al.
patent: 2004/0009675 (2004-01-01), Eissa et al.

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