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Method for the growth of industrial crystals

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state
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Method for the growth of industrial crystals

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
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Method for the growth of large low-defect single crystals

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state
Reexamination Certificate

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Method for the growth of nitride based semiconductors and its ap

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus
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Method for the heat treatment of ZnSe crystal

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth with a subsequent step of heat treating...
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Method for the heat treatment of ZnSe crystal

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – With means for treating single-crystal
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Method for the manufacture of a substrate, substrate...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state
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Method for the manufacture of large single crystals

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state
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Method for the preparation and doping of highly insulating monoc

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Including change in a growth-influencing parameter
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Method for the preparation of a single crystal of silicon with d

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
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Method for the preparation of a superlattice multilayered film

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
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Method for the preparation of an epitaxial silicon wafer...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth with a subsequent step of heat treating...
Reexamination Certificate

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Method for the preparation of diamond, graphite or their...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing
Reexamination Certificate

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Method for the preparation of magnetic oxide garnet single cryst

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
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Method for the preparation of nanocrystalline diamond thin films

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
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Method for the preparation of silicon single crystal

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth with a subsequent step acting on the...
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Method for the preparation of wire-formed silicon crystal

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having moving solid-liquid-solid region
Patent

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Method for the production of a monocrystalline layer on a...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate

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Method for the production of a plurality of optoelectronic...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate

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Method for the production of a silica glass crucible with...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus
Reexamination Certificate

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