Method for the preparation of wire-formed silicon crystal

Details Method for the preparation of wire-formed silicon crystal Method for the preparation of wire-formed silicon crystal

1995-12-27

1997-09-16

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having moving solid-liquid-solid region

117 52, 117 75, 117 87, C30B 2808

Patent

active

056675852

ABSTRACT:
Proposed is a low-cost method for the preparation of a wire-formed crystal of silicon having a diameter of 1 mm or smaller, in which a vertically held starting rod of silicon is melted at one end portion by high-frequency induction heating, a seed crystal is brought into contact with the molten portion and then the seed crystal and the starting silicon rod are pulled apart in the vertical direction at a controlled velocity with a controlled high-frequency power input so that the melt of silicon drawn by the seed crystal is solidified and crystallized into the form of a wire.

REFERENCES:
patent: 4040890 (1977-08-01), Burrus, Jr. et al.
patent: 4421721 (1983-12-01), Byer et al.
patent: 4863526 (1989-09-01), Miyazawa et al.
patent: 4866230 (1989-09-01), Ikeda et al.
8347 Materials Science and Engineering B, vol. B04, Nos. 1/04; 1 Oct. 1989, pp. 1-10, XP000095483; Werner Zulehner; "Status and Future of Silicon Crystal Growth".

Affiliated with

Also associated with

Rating

Method for the preparation of wire-formed silicon crystal does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for the preparation of wire-formed silicon crystal, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for the preparation of wire-formed silicon crystal will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-215130