Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1995-03-09
1996-10-15
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117 92, 117105, 117108, 117109, 117928, C30B 2518
Patent
active
055650309
ABSTRACT:
A novel method is proposed for the preparation of a superlattice multilayered film, which has a multilayered structure alternately consisting of epitaxially grown layers of a metal and layers of a metal oxide formed on the surface of a substrate and is useful as high-speed electronic devices, soft X-ray reflectors, neutron beam polarizers and the like. According to the discovery leading to this invention, good epitaxial growth of the layers can be accomplished when the metal has a face-centered cubic lattice structure and the metal oxide has a sodium chloride-type cubic lattice structure and the difference in the lattice constant between the metal and the metal oxide is small enough as in the combinations of silver and nickel oxide or magnesium oxide and nickel and nickel oxide.
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Kado Tetsuo
Yamamoto Shigeyuki
Japan as represented by Director General of Agency of Industrial
Kunemund Robert
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