Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – With means for treating single-crystal
Patent
1997-08-11
1999-08-31
Breneman, R. Bruce
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
With means for treating single-crystal
117100, 117956, C30B 100
Patent
active
059448911
ABSTRACT:
An object of the present invention is to provide a method for the heat treatment of a ZnSe crystal whereby the crystal can be prevented from crystallinity deterioration and caused to have low resistivity without occurrence of precipitates in the crystal.
The feature of the present invention consists in a method for the heat treatment of ZnSe comprising subjecting ZnSe crystal grown by a chemical vapor transport method using iodine as a transport agent to a heat treatment in a Zn vapor atmosphere and controlling a cooling rate after the heat treatment in 10 to 200.degree. C./min.
REFERENCES:
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patent: 4960721 (1990-10-01), Terashima
patent: 5204283 (1993-04-01), Kitagawa
"Growth of cubic ZnS, ZnSe and ZnS.sub.x Se.sub.1-x single crystal by iodine transport". Journal of crystal growth 47 (1979) p. 326-334.
Koyama et al., "etch pit studies of ZnSe crystal grown by the iodine transport method" Journal of Crystal Growth, vol. 96, No. 1, May 1989, Amsterdam NL, pp. 217-220, XP000008667.
Korostelin et al., "vapour growth and characterisation of bulk ZnSe single crystals" Journal of Crystal Growth, vol. 161, Apr. 1, 1996, Amsterdam NL, pp. 51-59, XP000626732.
Boettcher et al., "Zinc Selenide single crystal growth by chemical transport reactions" Journal of Crystal Growth, vol. 146, No. 1/4, Jan. 1, 1995, pp. 53-58, XP000511842.
Newbury et al., "the effect of annealing treatment on the microstructure or layers of zinc selenide deposited onto 100 germanium surfaces" Thin Solid Films., vol. 22, No. 3, Jul. 1974, Lausanne Ch, pp. 323-330, XP002046979.
Fujiwara Shinsuke
Hirota Ryu
Breneman R. Bruce
Olsen Alan
Sumitomo Electric Industries Ltd.
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