Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus
Reexamination Certificate
2005-09-20
2005-09-20
Kunemund, Robert (Department: 1765)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
C117S213000, C065S033700, C065S030100, C065SDIG008, C502S054000
Reexamination Certificate
active
06946030
ABSTRACT:
A silica glass crucible is produced bya) providing a porous amorphous silica glass green body, which is infiltrated with at least one substance that promotes crystallization of a silica glass crucible,b) drying the infiltrated silica glass green body,c) filling the green body with a metal or semimetal, andd) heating the filled green body for a period of from 1 h to 1000 h to a temperature of from 900 to 2000° C. to form at least a portion of silica crystalline phase.The process may be continued by further heating to melt the metal or semimetal and pulling a single crystal from the melt.
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English Derwent Abstract Corresponding to DE 199 43 103 AN 2001-329827 [35].
English Derwent Abstract Corresponding to DE 33 02 745 AN 1984-195987 [32].
Frauenknecht Axel
Frey Christoph
Lambert Ulrich
Schwertfeger Fritz
Szillat Holger
Kunemund Robert
Wacker-Chemie GmbH
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