Method for the preparation of magnetic oxide garnet single cryst

Details Method for the preparation of magnetic oxide garnet single cryst Method for the preparation of magnetic oxide garnet single cryst

1995-12-12

1998-07-28

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 30, 117 35, 117902, 117917, C30B 1520

Patent

active

057857520

ABSTRACT:
Proposed is an improvement in the method for the preparation of a chip of an oxide garnet film epitaxially having a specific chemical composition as grown on the surface of a GGG substrate wafer having a crystallographic plane orientation of (111), which is useful as a working element in a magnetostatic wave device such as high-frequency filters, signal noise enhancers, isolators and the like with decreased temperature dependence of the properties. The epitaxially grown single crystal film is adjusted to have such dimensions that the thickness h and the smallest dimension L within the plane of the film satisfy the relationship that the ratio h/L is in the range from 0.001 to 0.25.

REFERENCES:
patent: 4555374 (1985-11-01), Roshmann
patent: 5449942 (1995-09-01), Tanno et al.

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