Method for the heat treatment of ZnSe crystal

Details Method for the heat treatment of ZnSe crystal Method for the heat treatment of ZnSe crystal

1999-06-18

2000-10-17

Utech, Benjamin L.

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth with a subsequent step of heat treating...

117100, 117956, C30B 3302

Patent

active

061325066

ABSTRACT:
An object of the present invention is to provide a method for the heat treatment of ZnSe crystal whereby the crystal can be prevented from deterioration of crystallinity and caused to have low resistivity without occurrence of precipitates in the crystal. The feature of the present invention consists in a method for the heat treatment of ZnSe comprising subjecting ZnSe crystal grown by a chemical vapor transport method using iodine as a transport agent to a heat treatment in a Zn vapor atmosphere and controlling a cooling rate after the heat treatment in 10 to 200.degree. C./min.

REFERENCES:
patent: 4584053 (1986-04-01), Namba
patent: 4960721 (1990-10-01), Terashima
patent: 5204283 (1993-04-01), Kitagawa
patent: 5944891 (1999-08-01), Hirota et al.

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