Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus
Patent
1995-03-30
1997-06-10
Nguyen, Nam
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
117108, 117202, 118723VE, C30B 3500
Patent
active
056371462
ABSTRACT:
A method for the growth of semiconducting nitrides, such as GaN, InN, AlN, and their alloys, in an ultra-high vacuum chamber, wherein low energy atomic nitrogen is generated by a plasma-excited radical atom source, the atom beam is introduced to the heated substrate within a short distance, other gaseous reactants and dopants, such as TMGa, TMIn, TMAj, DEZn, CP.sub.2 Mg, SiH.sub.4, and similar organmetallic and hydride sources, are injected from a circular injector located between the substrate and the atom source, and therefore large area epitaxy with high growth rate is obtained.
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Chyi Jen-Inn
Garrett Felisa
Nguyen Nam
Saturn Cosmos Co., Ltd.
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