LandOfFree - US Patents - Listing for Single-crystal, oriented-crystal, and epitaxy growth processes; ,Forming from vapor or gaseous state

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Method and apparatus for growing diamond films

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Method and apparatus for growing high purity single crystal sili

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With movement of substrate or vapor or gas supply means...

Method and apparatus for growing silicon carbide crystals

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Method and apparatus for low temperature, low pressure chemical

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Including change in a growth-influencing parameter

Method and apparatus for manufacturing single crystal

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Method and apparatus for preparing crystalline thin-films for so

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With pretreatment or preparation of a base

Method and apparatus for producing large, single-crystals of...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Method and apparatus for producing MIIIN columns and MIIIN...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Fully-sealed or vacuum-maintained chamber

Method and apparatus for producing silicon carbide single...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Method and apparatus for producing silicon carbide single...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing

Method and apparatus for production of extremely thin SOI film s

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Method and apparatus for single crystal gallium nitride...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Method and apparatus for the production of SiC by means of...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing

Method and apparatus of generating PDMAT precursor

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Method and apparatus of growing a thin film

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Method and apparatus of growing a thin film onto a substrate

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Method and apparatus using organic vapor phase deposition for th

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Method and device for depositing in particular organic...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Method and device for epitaxial deposition of atoms or...