Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing
Patent
1992-04-27
1995-06-27
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With a step of measuring, testing, or sensing
117 86, 437225, 437226, 216 52, 216 66, C30B 2516
Patent
active
054270529
ABSTRACT:
A method and apparatus for uniformizing a bonded SOI (silicon on insulator) thin film layer by the reaction of chemical vapor-phase corrosion excited by the ultraviolet light, which effect the measurement of film thickness efficiently and conveniently and consequently attaining highly accurate control of the dispersion of thickness of the thin film layer without requiring the substrate to be removed from the reaction vessel for chemical vapor-phase corrosion on each occasion of the measurement or necessitating installation of a mechanism for alteration of the position of measurement inside or outside the reaction vessel are disclosed. The measurement of film thickness is carried out by keeping observation of interference fringes due to distribution of thickness of the film layer.
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Review of Scientific Instruments, vol. 61, No. 5, May 1990; pp. 1528-1536; "Si Wafers Uniformly Spaced; Bonding and Diagnostics"; Rhee, et al.
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Journal of Applied Physics, vol. 64, No. 10, Nov. 1988, pp. 4943-4950; "Bonding of Silicon Wafers For Silicon-on-Insulator"; Maszara, et al.
Abe Takao
Katayama Masatake
Nakano Masatake
Ohta Yutaka
Kunemund Robert
Shin-Etsu Handotai & Co., Ltd.
Snider Ronald R.
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