LandOfFree - US Patents - Listing for Single-crystal, oriented-crystal, and epitaxy growth processes; ,Forming from vapor or gaseous state

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Silicon epitaxial wafer and process for manufacturing the same

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

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Silicon epitaxial wafer and production method therefor

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

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Silicon fixture with roughened surface supporting wafers in...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

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Silicon semiconductor crystal and a method for manufacturing it

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

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Silicon wafer and method for manufacturing the same

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

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Silicon wafer for epitaxial wafer, epitaxial wafer, and...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

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Silicon wafer, and heat treatment method of the same and the...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

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Silicon wafer, and heat treatment method of the same and the...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

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Silicon-containing layer deposition with silicon compounds

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Including change in a growth-influencing parameter

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Simultaneous cyclical deposition in different processing...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

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Single crystal cutting method

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

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Single crystal GaN substrate, method of growing single...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing

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Single crystal silicon carbide thin film fabrication method...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

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Single crystal silicon layer, its epitaxial growth method...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

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Single crystalline aluminum nitride film, method of forming...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

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Single crystalline gallium nitride thick film having reduced...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

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Single step process for epitaxial lateral overgrowth of...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

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Single-crystal diamond of very high thermal conductivity

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing

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Single-crystal material on non-single-crystalline substrate

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

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Slicing of single-crystal films using ion implantation

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

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