Single crystalline gallium nitride thick film having reduced...

Details Single crystalline gallium nitride thick film having reduced... Single crystalline gallium nitride thick film having reduced...

2005-11-23

2009-11-24

Kunemund, Robert M (Department: 1792)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

C117S082000, C117S083000, C117S085000, C117S086000, C117S087000, C117S088000, C117S092000, C117S094000, C257S107000, C257S190000, C438S478000, C438S479000, C438S483000

Reexamination Certificate

active

07621998

ABSTRACT:
The present invention relates to a freestanding, thick, single crystalline gallium nitride (GaN) film having significantly reduced bending deformation. The inventive GaN film having a crystal tilt angle of C-axis to the <0001> direction per surface distance of 0.0022°/mm exhibits little bending deformation even at a thickness of 1 mm or more, and therefore, is beneficially used as a substrate for a luminescent device.

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J. of Crystal Growth, High-quality and crack-free GaN films grown on cracked Si-doped GaN.

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