Single crystalline aluminum nitride film, method of forming...

Details Single crystalline aluminum nitride film, method of forming... Single crystalline aluminum nitride film, method of forming...

2007-05-22

2007-05-22

Gupta, Yogendra N. (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

C117S952000

Reexamination Certificate

active

10809398

ABSTRACT:
A single crystalline aluminum nitride laminated substrate comprising a single crystalline α-Al2O3substrate such as a sapphire substrate, an aluminum oxynitride layer formed on the substrate and a single crystalline aluminum nitride film as the outermost layer, wherein the dislocation density in the single crystalline aluminum nitride is 108/cm2or less.The above single crystalline aluminum nitride laminated substrate is formed by nitriding the substrate by heating in the presence of carbon, nitrogen and carbon monoxide.The above single crystalline aluminum nitride film has a law dislocation density, little lattice mismatching and excellent crystallinity. A Group III element nitride film having excellent luminous efficiency can be formed on this aluminum nitride film. The above laminated substrate is used in a base substrate for a Group III element nitride film, a light emitting device and a surface acoustic wave device.

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T. Shibata et al., “Characterization of high-quality epitaxial AlN films grown by MOVPE”, Mat. Res. Soc. Symp. Proc., vol. 693, 2002, pp. I9.3.1-I9.3.4, Material Research Society.

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