Silicon semiconductor crystal and a method for manufacturing it

Details Silicon semiconductor crystal and a method for manufacturing it Silicon semiconductor crystal and a method for manufacturing it

1998-03-20

1999-03-23

Hiteshew, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117 89, 117 90, 117106, C30B 2504

Patent

active

058853464

ABSTRACT:
Organic protective film 4 is directly adhered on the surface of silicon semiconductor crystal 1. Silicon semiconductor crystal 1 with organic protective film 4 is prepared by adhering organic protective film 4 on the surface of silicon semiconductor crystal substrate 1 on which oxide film 8 is formed, removing oxide film 8 to directly adhere organic protective film 4 on the surface of silicon semiconductor crystal 1, removing organic protective film 4 and then treating silicon semiconductor crystal 1.

REFERENCES:
patent: 5028560 (1991-07-01), Tsukamoto et al.
patent: 5397738 (1995-03-01), Takagi
patent: 5643826 (1997-07-01), Ohtani et al.

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