Silicon epitaxial wafer and process for manufacturing the same

Details Silicon epitaxial wafer and process for manufacturing the same Silicon epitaxial wafer and process for manufacturing the same

2007-06-12

2007-06-12

Hiteshew, Felisa (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

C117S089000, C117S092000, C117S093000

Reexamination Certificate

active

10501672

ABSTRACT:
The present invention provides a silicon epitaxial wafer having an excellent IG capability all over the radial direction thereof and a process for manufacturing the same. The present invention is directed to a silicon epitaxial wafer having an excellent gettering capability all over the radial direction thereof, wherein density of oxide precipitates detectable in the interior of a silicon single crystal substrate after epitaxial growth is 1×109/cm3or higher at any position in the radial direction.

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