LandOfFree - US Patents - Listing for Single-crystal, oriented-crystal, and epitaxy growth processes; ,Forming from vapor or gaseous state

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Semiconductor substrate and method of treating semiconductor sub

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Patent

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Semiconductor thin film and process for production thereof

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Reexamination Certificate

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Semiconductor wafer and production method therefor

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Reexamination Certificate

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Sequential chemical vapor deposition

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Patent

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Sequential hydride vapor phase epitaxy

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Reexamination Certificate

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Shaped nanocrystal particles and methods for making the same

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing

Reexamination Certificate

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SiC device and method for manufacturing the same

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

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SiC material, semiconductor processing equipment and method...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Reexamination Certificate

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Sic single crystal and method for growing the same

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Reexamination Certificate

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SiC single crystal and method for growth thereof

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

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Silicon carbide and method for producing the same

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With pretreatment or preparation of a base

Reexamination Certificate

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Silicon carbide film and method for manufacturing the same

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

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Silicon carbide single crystal and method and apparatus for...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Fully-sealed or vacuum-maintained chamber

Reexamination Certificate

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Silicon carbide single crystal and method and apparatus for...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Reexamination Certificate

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Silicon carbide single crystal and method and apparatus for...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

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Silicon carbide single crystal and production thereof

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Fully-sealed or vacuum-maintained chamber

Reexamination Certificate

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Silicon carbide single-crystals

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Including change in a growth-influencing parameter

Reexamination Certificate

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Silicon carbide sublimation systems and associated methods

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Reexamination Certificate

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Silicon carbide substrate, and method for producing the...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

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Silicon epitaxial wafer and its manufacturing method

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

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