Semiconductor substrate and method of treating semiconductor sub

Details Semiconductor substrate and method of treating semiconductor sub Semiconductor substrate and method of treating semiconductor sub

1996-12-13

1998-10-06

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117 94, 117106, 117913, 438924, 438694, C30B 3308

Patent

active

058171746

ABSTRACT:
A method of treating a semiconductor substrate, which comprises the steps of subjecting a surface of the semiconductor substrate to an annealing treatment, performing an etching treatment of the surface of the semiconductor substrate under a condition where the semiconductor substrate is substantially prevented from being etched and a precipitate exposed from the surface of the semiconductor substrate is selectively etched away, and forming a monocrystalline film of a semiconductor material constituting the semiconductor substrate on the surface of the semiconductor substrate.

REFERENCES:
patent: 3511727 (1970-05-01), Hays
patent: 5173152 (1992-12-01), Tamaka
patent: 5380677 (1995-01-01), Eakin
patent: 5508226 (1996-04-01), Ito

Affiliated with

Also associated with

Rating

Semiconductor substrate and method of treating semiconductor sub does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor substrate and method of treating semiconductor sub, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor substrate and method of treating semiconductor sub will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-73724