Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1996-12-13
1998-10-06
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117 94, 117106, 117913, 438924, 438694, C30B 3308
Patent
active
058171746
ABSTRACT:
A method of treating a semiconductor substrate, which comprises the steps of subjecting a surface of the semiconductor substrate to an annealing treatment, performing an etching treatment of the surface of the semiconductor substrate under a condition where the semiconductor substrate is substantially prevented from being etched and a precipitate exposed from the surface of the semiconductor substrate is selectively etched away, and forming a monocrystalline film of a semiconductor material constituting the semiconductor substrate on the surface of the semiconductor substrate.
REFERENCES:
patent: 3511727 (1970-05-01), Hays
patent: 5173152 (1992-12-01), Tamaka
patent: 5380677 (1995-01-01), Eakin
patent: 5508226 (1996-04-01), Ito
Takahashi Mami
Tomita Hiroshi
Defillo Evelyn
Kabushiki Kaisha Toshiba
Kunemund Robert
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