Semiconductor thin film and process for production thereof

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Reexamination Certificate

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C117S103000, C117S106000, C117S108000, C117S904000

Reexamination Certificate

active

07022183

ABSTRACT:
To improve the laser annealing process for polycrystallizing amorphous silicon to form silicon thin films having large crystal particle diameters at a high throughput, the present invention is directed to a process of crystallization by irradiation of a semiconductor thin film formed on a substrate with pulsed laser light. The process comprises having a means to shape laser light into a linear beam and a means to periodically and spatially modulate the intensity of pulsed laser in the direction of the long axis of the linear beam by passing through a phase-shifting stripy pattern perpendicular to the long axis, and collectively forming for each shot a polycrystalline film composed of crystals which have grown in a certain direction over the entire region irradiated with the linear beam.

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Wen-Chang Yeh and Masakiyo Matsumura, “Preparation of Giant-Grain Seed Layer for Poly-Silicon Thin-Film Solar Cells”, Jpn. J. Appl. Phys. vol. 38 (1999), pp. L110-L112.
“CrystaLas UV Optics System for Excimer Laser Based Crystallization of thin Silicon Films”, MicroLas Lasersystem GMBH, 7 pages.
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