Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2006-04-04
2006-04-04
Hiteshew, Felisa C. (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S103000, C117S106000, C117S108000, C117S904000
Reexamination Certificate
active
07022183
ABSTRACT:
To improve the laser annealing process for polycrystallizing amorphous silicon to form silicon thin films having large crystal particle diameters at a high throughput, the present invention is directed to a process of crystallization by irradiation of a semiconductor thin film formed on a substrate with pulsed laser light. The process comprises having a means to shape laser light into a linear beam and a means to periodically and spatially modulate the intensity of pulsed laser in the direction of the long axis of the linear beam by passing through a phase-shifting stripy pattern perpendicular to the long axis, and collectively forming for each shot a polycrystalline film composed of crystals which have grown in a certain direction over the entire region irradiated with the linear beam.
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Fukuda Hiroshi
Gotou Jun
Ohkura Makoto
Saito Masakazu
Satou Takeshi
A. Marquez, Esq. Juan Carlos
Fisher Esq. Stanley P.
Hiatchi Ltd.
Hiteshew Felisa C.
Reed Smith LLP
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