Use of polysilicon field plates to improve high voltage...
Use of pulsed grounding source in a plasma reactor
Use of residual organic compounds to facilitate gate break on a
Use of residual organic compounds to facilitate gate break...
Use of residual organic compounds to facilitate gate break...
Use of sacrificial dielectric structure to form...
Use of sacrificial inorganic dielectrics for dual damascene...
Use of sacrificial layers in the manufacture of high...
Use of scatterometry for in-situ control of gaseous phase...
Use of selective epitaxial silicon growth in formation of...
Use of selective oxidation to form asymmetrical oxide...
Use of selective oxidation to form asymmetrical oxide...
Use of selective oxidation to form asymmetrical oxide...
Use of selective oxidation to improve LDMOS power transistors
Use of selective ozone TEOS oxide to create variable...
Use of selective ozone teos oxide to create variable...
Use of separate ZnTe interface layers to form OHMIC contacts to
Use of Si-rich oxide film as a chemical potential barrier...
Use of SiD.sub.4 for deposition of ultra thin and controllable o
Use of silicon block process step to camouflage a false...