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Corner protection to reduce wrap around

Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive...
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Crackstop with release layer for crack control in...

Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
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Creation of a polarizable layer in the buried oxide of...

Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Total dielectric isolation
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Creation of dielectrically insulating soi-technlogical...

Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
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Creation of high mobility channels in thin-body SOI devices

Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Total dielectric isolation
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Creation of high mobility channels in thin-body SOI devices

Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Total dielectric isolation
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Creation of subresolution features via flow characteristics

Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Having air-gap dielectric
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Cut-and-paste imprint lithographic mold and method therefor

Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Having substrate registration feature
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CVD flowable gap fill

Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
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CVD flowable gap fill

Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Recessed oxide by localized oxidation
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