CVD flowable gap fill

Details CVD flowable gap fill CVD flowable gap fill

2007-10-26

2009-12-08

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

C257SE21559

Reexamination Certificate

active

07629227

ABSTRACT:
Methods of lining and/or filling gaps on a substrate by creating flowable silicon oxide-containing films are provided. The methods involve introducing vapor-phase silicon-containing precursor and oxidant reactants into a reaction chamber containing the substrate under conditions such that a condensed flowable film is formed on the substrate. The flowable film at least partially fills gaps on the substrates and is then converted into a silicon oxide film. In certain embodiments, the methods involve using a catalyst, e.g., a nucleophile or onium catalyst, in the formation of the film. The catalyst may be incorporated into one of the reactants and/or introduced as a separate reactant. Also provided are methods of converting the flowable film to a solid dielectric film. The methods of this invention may be used to line or fill high aspect ratio gaps, including gaps having aspect ratios ranging from 3:1 to 10:1.

REFERENCES:
patent: 4740480 (1988-04-01), Ooka
patent: 5320983 (1994-06-01), Quellet
patent: 5516721 (1996-05-01), Galli et al.
patent: 5858880 (1999-01-01), Dobson et al.
patent: 5874367 (1999-02-01), Dobson
patent: 5899751 (1999-05-01), Chang et al.
patent: 5902127 (1999-05-01), Park
patent: 5932289 (1999-08-01), Dobson et al.
patent: 6143626 (2000-11-01), Yabu et al.
patent: 6218268 (2001-04-01), Xia et al.
patent: 6242366 (2001-06-01), Beekman et al.
patent: 6287989 (2001-09-01), Dobson
patent: 6300219 (2001-10-01), Doan et al.
patent: 6383951 (2002-05-01), Li
patent: 6413583 (2002-07-01), Moghadam et al.
patent: 6475564 (2002-11-01), Carter et al.
patent: 6544858 (2003-04-01), Beekman et al.
patent: 6640840 (2003-11-01), MacNeil
patent: 6653247 (2003-11-01), MacNeil
patent: 6790737 (2004-09-01), Schneegans et al.
patent: 6828162 (2004-12-01), Halliyal et al.
patent: 6846757 (2005-01-01), MacNeil
patent: 6984561 (2006-01-01), Herner et al.
patent: 7074690 (2006-07-01), Gauri et al.
patent: 2002/0006729 (2002-01-01), Geiger et al.
patent: 2003/0146416 (2003-08-01), Takei et al.
patent: 2004/0048455 (2004-03-01), Karasawa et al.
patent: 2004/0152342 (2004-08-01), Li et al.
patent: 2007/0281495 (2007-12-01), Mallick et al.
U.S. Office Action mailed Aug. 23, 2005, from U.S. Appl. No. 10/810,066.
Lang et al., “CVD Flowable Gap Fill,” Novellus Systems, Inc., U.S. Appl. No. 11/323,812, filed Dec. 29, 2005, pp. 1-21.
Notice of Allowance and Fee Due mailed Feb. 15, 2006 from U.S. Appl. No. 10/810,066.
Allowed Claims from U.S. Appl. No. 10/810,066.
Gauri et al., “Flowable Film Dielectric Gap Fill Process,” Novellus Systems, Inc., U.S. Appl. No. 11/447,594, filed Jun. 5, 2006.
U.S. Office Action mailed Jun. 27, 2008, from U.S. Appl. No. 11/447,594.
U.S. Office Action mailed Oct. 26, 2007, from U.S. Appl. No. 11/323,812.
U.S. Office Action mailed Apr. 9, 2008, from U.S. Appl. No. 11/323,812.
U.S. Office Action mailed Oct. 9, 2008, from U.S. Appl. No. 11/323,812.
Wang, et al., “Density Gradient-Free Gap Fill,” Novellus Systems, Inc., U.S. Appl. No. 11/834,581, filed Aug. 6, 2007.
Notice of Allowance and Fee Due mailed Feb. 15, 2006 from U.S. Appl. No. 11/447,594.
Allowed Claims from U.S. Appl. No. 11/447,594.
U.S. Office Action mailed Nov. 12, 2008, from U.S. Appl. No. 11/834,581.
Antonelli et al., “PECVD Flowable Dielectric Gap Fill,” Novellus Systems, Inc., U.S. Appl. No. 12/334,726, filed Dec. 15, 2008.

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