Creation of dielectrically insulating soi-technlogical...

Details Creation of dielectrically insulating soi-technlogical... Creation of dielectrically insulating soi-technlogical...

2011-08-02

2011-08-02

Nguyen, Thinh T (Department: 2818)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S424000, C438S428000, C257S513000, C257SE21552

Reexamination Certificate

active

07989308

ABSTRACT:
The aim of the invention is to integrate low-voltage logic elements and high-voltage power elements in one and the same silicon circuit. Said aim is achieved by dielectrically chip regions having different potentials from each other with the aid of isolation trenches (10). In order to prevent voltage rises at sharp edges on the bottom of the isolation trenches, said edges are rounded in a simple process, part of the insulating layer (2) being isotropically etched.

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