Creation of high mobility channels in thin-body SOI devices

Details Creation of high mobility channels in thin-body SOI devices Creation of high mobility channels in thin-body SOI devices

2006-04-13

2009-02-03

Menz, Laura M (Department: 2813)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

C438S407000, C438S458000

Reexamination Certificate

active

07485541

ABSTRACT:
A method for fabricating a strained silicon film to a silicon on insulation (SOI) wafer. A layer of oxide is deposited onto a wafer that has a stack structure of a first base substrate, a layer of relaxed film=and a second layer of strained film. The SOI wafer has a stack structure of a second base substrate and a layer of oxidized film. The SOI wafer is attached to the wafer and is heated at a first temperature. This causes a silicon dioxide (SiO2) dangling bond to form on the second base substrate of the SOI wafer, transferring the strained film from one wafer to the other.

REFERENCES:
patent: 5882987 (1999-03-01), Srikrishnan
patent: 5906951 (1999-05-01), Chu et al.
patent: 6059895 (2000-05-01), Chu et al.
patent: 6100166 (2000-08-01), Sakaguchi et al.
patent: 6323108 (2001-11-01), Kub et al.
patent: 6403450 (2002-06-01), Maleville et al.
patent: 6410371 (2002-06-01), Yu et al.
patent: 6717213 (2004-04-01), Doyle et al.
patent: 6852652 (2005-02-01), Maa et al.
patent: 6991956 (2006-01-01), Ghyselen et al.
patent: 7067386 (2006-06-01), Doyle et al.
patent: 7067430 (2006-06-01), Maa et al.
patent: 7247545 (2007-07-01), Maa et al.
patent: 7265030 (2007-09-01), Maa et al.
patent: 2002/0081861 (2002-06-01), Robinson et al.
patent: 2003/0003679 (2003-01-01), Doyle et al.
patent: 2004/0157402 (2004-08-01), Doyle et al.
patent: 2005/0070115 (2005-03-01), Maa et al.
patent: 2006/0019464 (2006-01-01), Maa et al.
patent: 2006/0185581 (2006-08-01), Aga et al.
patent: 2006/0189096 (2006-08-01), Doyle et al.
patent: 2006/0205178 (2006-09-01), Doyle et al.

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