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Abrupt pn junction diode formed using chemical vapor...

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – Reverse-biased pn junction guard region
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Bipolar transistor with base drive circuit protection

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – Reverse-biased pn junction guard region
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Doubly graded junction termination extension for edge...

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – Reverse-biased pn junction guard region
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Edge termination for semiconductor devices

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – Reverse-biased pn junction guard region
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Effective shield structure for improving substrate isolation...

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – Reverse-biased pn junction guard region
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High-voltage semiconductor device with integrated edge structure

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – Reverse-biased pn junction guard region
Patent

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Semiconductor apparatus and method of manufacturing same,...

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – Reverse-biased pn junction guard region
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Semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – Reverse-biased pn junction guard region
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Semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – Reverse-biased pn junction guard region
Patent

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Semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – Reverse-biased pn junction guard region
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Semiconductor device for providing a noise shield

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – Reverse-biased pn junction guard region
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Semiconductor device having an improved breakdown voltage-raisin

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – Reverse-biased pn junction guard region
Patent

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