Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – Reverse-biased pn junction guard region
Reexamination Certificate
2011-07-12
2011-07-12
Tran, Minh-Loan T (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
With means to increase breakdown voltage threshold
Reverse-biased pn junction guard region
C257S202000, C257S203000, C257S509000, C257S490000, C257S495000, C257S499000, C257S544000, C257SE27110, C257SE29012, C257SE29013, C257SE29019, C257SE21544
Reexamination Certificate
active
07977762
ABSTRACT:
An integrated circuit (IC) is disclosed to include a central area of the IC that is partitioned into a first section containing at least one digital circuit and a second section containing at least one analog circuit; and a guard strip (or shield) that is within the central area and that is positioned within between the digital circuit and the analog circuit. The shield or guard strip comprises of n-well and p-tap regions that separate digital and analog circuits.
REFERENCES:
patent: 6157073 (2000-12-01), Lehongres
patent: 2004/0075144 (2004-04-01), Zitouni et al.
patent: 2007/0188369 (2007-08-01), Itagaki
Heshami Mehrdad
Islam Syed S.
Keramat Mansour
Alvand Technologies, Inc.
Imam Maryam
IPxLaw Group LLP
Lopez Fei Fei Yeung
Tran Minh-Loan T
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